C1906 transistor datasheet bookshelf

C102 datasheet, equivalent, cross reference search. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. Transistor specifications explained electronics notes. Complementary low voltage transistor stmicroelectronics. Applications general purpose switching and amplification, e. The electrical characteristics of each version are. When use as an audio frequency general purpose amplifier, can be operated in the active region. It is typically used for lowcurrent, medium voltage, and moderate speed purposes. Transistor uses, transistor rules, common emitter circuit, small signal amplification, fieldeffect transistors, jfet operating regions. The guaranteed minimum value is given because the actual value varies from transistor to transistor even for those of the same type. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit.

Jans and escc version of the products are assembled and tested in compliance with the agency specification. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Low noise transistors npn silicon maximum ratings rating symbol bc bc unit collectoremitter voltage vceo 30 45 vdc collectorbase voltage vcbo 30 50 vdc emitterbase voltage vebo 5. The 2n3904 is common generalpurpose lowpower npn transistor used amplifying or switching applications. We have the broadest line of bipolar power transistors in the industry and the motorola commitment to quality and total customer satisfaction to go with them. The increased base current will pull the voltage at t5 base down but t5 being in saturation can cause slow response when the signal has to rise again. Note that current gain is just a number so it has no units.

C datasheet, c pdf free datasheets, cmos voltage detector. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0. Transistor codes surface mount, pnp, npn, choosing. Toshiba transistor silicon pnp epitaxial type 2sa1837 power amplifier applications driver stage amplifier applications high transition frequency. Korea electronics kec catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, semiconductors. Offers a lineup of compound products combining two elements with the. Nov 18, 2018 d718 datasheet vcbo120v, 8a, npn transistor toshiba.

Pinning pin description 1 base 2 collector 3 emitter. Npn epitaxial silicon transistor datasheet catalog. Free devices maximum ratings rating symbol value unit collector emitter voltage bc637 bc639 vceo 60 80 vdc collector base voltage bc637 bc639 vcbo 60 80 vdc emitter base voltage vebo 5. Npn 100ma 50v digital transistors bias resistor builtin transistors. Bc557, 557b general purpose transistor page 4 310505 v1. D718 datasheet vcbo120v, 8a, npn transistor toshiba. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. Specification mentioned in this publication are subject to change without notice. Circuits requiring precision references the end of the data sheet. Savantic semiconductor product specification silicon pnp power transistors bd176 bd178 bd180. The 2sc1957 is a silicon npn epitaxial planer type transistor designed for rf power amplifiers on hf band mobile radio applications. In data sheets and application notes which still contain nxp or philips. Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf.

Ldmos rf power field effect transistor 90 w, 869960 mhz. Connecting transistors in series electrical engineering. Data sheets contain information regarding a product macom technology solutions is considering for development. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Rating collectoremitter voltage collectorbase voltage emitterbase voltage collector current continuous total device dissipation ta25c.

This transistor is further divided into four groups according to the dc current gain, o, y, g, and l and has 140, 240, 400 and 700 hfe dc current gain respectively. Description npn transistor in a to92 sot54 plastic package. Toshiba transistor silicon pnp epitaxial type 2sa1837. C1906 datasheet, c1906 pdf, c1906 data sheet, c1906 manual, c1906 pdf, c1906, datenblatt, electronics c1906, alldatasheet, free, datasheet, datasheets, data sheet. Item collector to base voltage collector to emitter voltage emitter to base voltage collector current emitter current collector power dissipation junction temperature storage temperature symbol vcbo vceo vebo pc tj tstg ratings. Triple diffused silicon npn transistor designed for low frequency power amplifier maximum ratings characteristic symbol value unit collector base voltage vcbo 100 v collector emitter voltage vceo 80 v emitter base voltage vebo 5 v collector current dc ic 4 a collector current peak ic 8 a. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Npn general purpose transistor 2pc1815 features low current max.

Mos fet realizes low onstate resistance with even compact packages. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Collector to base voltage collector to base voltage, vcb v 2020 50 100 20050 100 f 1 mhz ie 0. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Package dimensions bc635637639 dimensions in millimeters 2002 fairchild semiconductor corporation rev. Korea electronics kec datasheet pdf catalog first page. It can also be used for the switching purpose just like other pnp transistors. Bc637 high current npn transistors on semiconductor. Complementary to 2sc4793 maximum ratings tc 25c characteristics symbol rating unit collectorbase voltage v cbo. Ss9015 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 45 v vebo emitterbase voltage 5 v ic collector current 100 a.

Npn medium power transistor series in surfacemounted device smd plastic packages. C datasheet, winnt32 exexp alldatasheet c transistor datasheet pdf components datasheet search selected language part name description c datasheet, pdf shortcut c 17 recommended result. In data sheets and application notes which still contain nxp or philips semiconductors references, use the references to nexperia, as shown. The heater is a pnp power transistor in a large to218 tab package. This parameter is the collector to base breakdown voltage of a bipolar transistor. Lp395 ultra reliable power transistor datasheet texas instruments. Bipolar power transistor selection guide mouser electronics.

Toshiba power transistor semiconductor data book 1983. When the device is used as an emitter follower with a low source. Korea electronics kec catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits. A1015 datasheet, a1015 pdf, a1015 data sheet, datasheet, data sheet, pdf. Switching regulator control circuit for 500 khz operation. Bc637, bc639, bc63916 high current transistors npn silicon features these are pb. Npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 30 v vebo emitterbase voltage 5 v ic collector current 30 ma pc collector power. Ericsson rbs 6102 asea hafo ab gm378 transistor b0243c kt606 ericsson spo 1410 semicon indexes transistor 8bb smd trnec tokin 0d 108. Hitachi silicon npn epitaxial planar,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. As shown the output can only go down to 750v when t5 saturates. Performance is based on target specifications, simulated results, andor prototype measurements. Transistor silicon pnp epitaxial type pct process audio frequency general. This publication supersedes and replaces all information previously supplied.